Patent · US Active

Enhanced write performance utilizing program interleave

US11875061B2 · kind B2 · utility

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0References
12Claims
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Key dates

Filing dateApr 22, 2022
Grant dateJan 16, 2024
Priority date
Expiry dateApr 28, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5641
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A system includes a memory sub-system including a single-level cell (SLC) cache, a first multiple level cell (XLC) storage including a first XLC block, and a second XLC storage including a second XLC block. Data is indirectly written to the first XLC storage via the SLC cache in a first XLC write mode, and data is directly written to the second XLC storage in a second XLC write mode. The system further includes a processing device to perform operations including receiving data from a host system, in response to receiving the data, initiating a write operation to write the data to the first XLC storage and the second XLC storage, and causing subsets of the data to be alternatively written to the first XLC block in the first XLC write mode and to the second XLC block in the second XLC write mode using page level interleave.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.