SOT reader using BiSb topological insulator
US11875827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2022 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Mar 25, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.