Memory and read and write methods of memory
US11875835B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 20, 2020 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Sep 21, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory and a read and write method of memory can prevent the magnetic random-access memory (MRAM) from being easily damaged or degraded by excessive write current during use, and increase memory integration density. The memory includes: a storage unit, comprising a storage element; a source line, electrically connected to a first end of the storage element; the memory is configured to change a storage state of the storage element by a first current and a second current, the first current flowing through the storage element and the second current flowing through the source line without flowing through the storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.