Erxuan PING
10Patents
1h-index
8Co-inventors
36Inventor score
Filing activity: Nov 11, 2020 → Jan 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11895852B2 | Method for forming semiconductor structure by using sacrificial layer configured to be replaced subsequently to form bit line, semiconductor structure, and memory | Electricity | 1 | Active |
| US12108591B2 | Semiconductor structure, method for forming semiconductor structure and memory | Electricity | 1 | Active |
| US12082419B2 | Semiconductor structure and forming method therefor, and memory and forming method therefor | Electricity | 1 | Active |
| US12419041B2 | Method for forming storage node contact structure and semiconductor structure | Electricity | 0 | Active |
| US11887859B2 | Method for forming active region array and semiconductor structure | Electricity | 0 | Active |
| US11805701B2 | Memory and forming methods and control methods thereof | Electricity | 0 | Active |
| US11871562B2 | Method for forming storage node contact structure and semiconductor structure | Electricity | 0 | Active |
| US11875835B2 | Memory and read and write methods of memory | Physics | 0 | Active |
| US12376291B2 | Semiconductor device including shared sense amplification circuit group | Physics | 0 | Active |
| US12340870B2 | Method for forming a semiconductor device pillar with source, channel, and drain | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.