Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switch
US11875847B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2022 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Jul 17, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.