Semiconductor device
US11876097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Jan 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.