Patent · US Active

Gate control method of MOS-gated power device

US11876509B1 · kind B1 · utility

1Cited by

1References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Guang Zeng · Port Jefferson Station, US
Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
Mark-Matthias Bakran · Erlangen, DE
Zheming Li · Bayreuth, DE

Key dates

Filing date	Jul 28, 2022
Grant date	Jan 16, 2024
Priority date	—
Expiry date	Jul 28, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0027
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.