Film forming method and film forming apparatus
US11879067B2 · kind B2 · utility
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Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film forming method is a method of forming a film on a substrate top face including a first region in which a metal or a semiconductor is exposed and a second region in which an insulator is exposed. The method includes a SAM forming process of forming a self-assembled monolayer film of a perfluoropolyether group-containing compound on the first region and a film growth process of forming a predetermined film on the second region after execution of SAM forming process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.