Low-defect-density gamma phase aluminum oxide substrates for heteroepitaxial synthesis
US11879185B2 · kind B2 · utility
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Key dates
| Filing date | Dec 7, 2021 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Mar 20, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B1/023
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.