Capacitance measurement without disconnecting from high power circuit
US11881381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Feb 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6655
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and an apparatus of plasma-assisted semiconductor processing is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power including a first target frequency to multiple stations to thereby generate a plasma in the stations, wherein the RF power is distributed according to a RF power parameter configured to reduce station to station variations; c) tuning an impedance matching circuit for a first station included in the multiple stations while distributing RF power to the first station by: i) measuring a capacitance of a capacitor in the impedance matching circuit without disconnecting the capacitor from the impedance matching circuit; and ii) adjusting, according to the capacitance measured in (i) and the RF power parameter, a capacitance of the capacitor; and d) performing a semiconductor processing operation on the substrate at each station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.