Method of forming transition metal dichalcogenide thin film
US11881399B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Sep 21, 2022 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Sep 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02557
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.