Semiconductor devices and methods of manufacturing semiconductor devices
US11881458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2023 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Jan 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.