Alkoxysilacyclic or acyloxysilacyclic compounds and methods for depositing films using same
US11884689B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jan 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.