Polishing composition, polishing method, and method of producing semiconductor substrate
US11884843B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 1, 2022 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Sep 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.