Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film
US11886118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | May 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/768
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where W1 represents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and R1 an alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.