Patent · US Active

Memory sub-system codeword addressing

US11886331B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 15, 2023
Grant dateJan 30, 2024
Priority date
Expiry dateFeb 15, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2212/7202
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method includes writing a first codeword to a first set of contiguous partitions in a first memory die of a memory device. The method further includes writing a first portion of a second codeword to a second set of contiguous partitions in the first memory die of the memory device and writing a second portion of the second codeword to a first set of contiguous partitions in a second memory die of the memory device. The method also includes writing a third codewords to a second set of contiguous partitions in the second memory die of the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.