Capacitor structure and method of forming the same
US11887646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jul 22, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor device, a doped region is formed in a substrate from a first main surface. An insulating layer is formed over the doped region of the substrate. Contacts are formed in the insulating layer such that the contacts extend into the doped region. A portion of the substrate is removed from a second main surface. A trench, a first conductive line, and a second conductive line are formed from the doped region of the substrate through etching the substrate from the second main surface. The trench extends through the substrate to expose the insulating layer. The first and second conductive lines are spaced apart from each other by the trench. The contacts are positioned along and in contact with the first and second conductive lines. The trench is filled with a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.