Method of monitoring semiconductor process
US11887898B2 · kind B2 · utility
0Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2020 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Mar 16, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of monitoring a semiconductor process includes the following steps. A process parameter is set to a first condition. A first process is performed to form a first film layer on a first wafer. The first film layer does not cover a wafer edge region of the first wafer. The first wafer having the first film layer is photographed by an image capturing device to obtain a first wafer image. Image recognition is performed to the first wafer image to obtain first data. Whether a position of the first film layer is offset is determined according to the first data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.