Ferroelectric devices
US11888019B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2020 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Apr 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/40
Abstract
Some embodiments include a ferroelectric device having a ferroelectric insulative material which includes zinc. Some embodiments include a capacitor having a ferroelectric insulative material between a first electrode and a second electrode. The ferroelectric insulative material includes one or more metal-oxide-containing layers and one or more zinc-containing layers. Some embodiments include a memory array having a first set of first conductive structures and a second set of second conductive structures. The first conductive structures are coupled with driver circuitry, and the second conductive structures are coupled with sensing circuitry. The memory array includes an array of access devices. Each of the access devices is uniquely addressed by one of the first conductive structures in combination with one of the second conductive structures. Ferroelectric capacitors are coupled with the access devices. Each of the ferroelectric capacitors includes ferroelectric insulative material having zinc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.