Self-aligned field plate mesa FPM SiC schottky barrier diode

US11888037B2 · kind B2 · utility

Assignee

• Hitachi Energy Ltd · CH

Inventors

• Andrei Mihaila · Cambridge, GB
• Lars Knoll · Cokeville Municipal Airport access, CH
• Lukas Kranz · Zürich, CH

Key dates

• Filing date: Mar 5, 2019
• Grant date: Jan 30, 2024
• Expiry date: Nov 17, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8303

Abstract

A power semiconductor device includes a wide-bandgap semiconductor layer having an active region and a termination region that laterally surrounds the active region. The wide-bandgap semiconductor layer has a first recess that is recessed from the first main side in the termination region and surrounds the active region and a second recess that is recessed from the first main side in the active region and is filled with an insulating material. A depth of the second recess is the same as a depth of the first recess. A field plate on the first main side of the wide-bandgap semiconductor layer exposes a first portion of the wide-bandgap semiconductor layer in the termination region.