Electrical devices making use of counterdoped junctions
US11888079B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2022 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jul 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/197
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.