Quantum Semiconductor LLP
30Patents
19Active
30Granted
47Portfolio score
Filing activity: Aug 27, 2001 → Jul 30, 2022 · 7 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7153720B2 | CMOS image sensor | Electricity | 108 | Expired |
| US7521737B2 | Light-sensing device | Electricity | 94 | Expired |
| US6943051B2 | Method of fabricating heterojunction photodiodes integrated with CMOS | Electricity | 34 | Expired |
| US6891869B2 | Wavelength-selective photonics device | Emerging Cross-Sectional Technologies | 33 | Expired |
| US7319423B2 | Multi-mode ADC and its application to CMOS image sensors | Electricity | 25 | Expired |
| US8120079B2 | Light-sensing device for multi-spectral imaging | Electricity | 21 | Active |
| US7265006B2 | Method of fabricating heterojunction devices integrated with CMOS | Electricity | 16 | Expired |
| US7068206B2 | Asynchronous serial analog-to-digital converter methodology having dynamic adjustment of the bandwidth | Electricity | 15 | Expired |
| US9640616B2 | Superlattice materials and applications | Emerging Cross-Sectional Technologies | 12 | Active |
| US7115963B2 | Circuitry for image sensors with avalanche photodiodes | Electricity | 10 | Expired |
| US9036960B2 | Photonic via waveguide for pixel arrays | Electricity | 9 | Active |
| US8885987B2 | Photonic via waveguide for pixel arrays | Electricity | 8 | Active |
| US8183516B2 | Layouts for the monolithic integration of CMOS and deposited photonic active layers | Electricity | 7 | Active |
| US7442953B2 | Wavelength selective photonics device | Electricity | 7 | Expired |
| US8233052B2 | Imaging devices operable with multiple aspect ratios | Electricity | 5 | Active |
| US8436288B2 | Image sensors with photo-current mode and solar cell operation | Electricity | 5 | Active |
| US8816443B2 | Method of fabricating heterojunction photodiodes with CMOS | Electricity | 3 | Active |
| US7023030B2 | MISFET | Electricity | 3 | Expired |
| US6674099B1 | MISFET | Electricity | 2 | Expired |
| US9917155B2 | Superlattice materials and applications | Emerging Cross-Sectional Technologies | 2 | Active |
| US8963169B2 | CMOS pixels comprising epitaxial layers for light-sensing and light emission | Emerging Cross-Sectional Technologies | 2 | Active |
| US7518540B2 | Multi-mode ADC and its application to CMOS image sensors | Electricity | 2 | Active |
| US10128339B2 | Superlattice materials and applications | Emerging Cross-Sectional Technologies | 1 | Active |
| US11888079B2 | Electrical devices making use of counterdoped junctions | Electricity | 0 | Active |
| US11424382B2 | Electrical devices making use of counterdoped junctions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.