Patent · US Active

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US11888083B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Werner Bergbauer · Windberg, DE
Thomas Lehnhardt · Regensburg, DE
Jürgen Off · Regensburg, DE
Joachim Hertkorn · Neukirchen, DE

Key dates

Filing date	Jul 11, 2022
Grant date	Jan 30, 2024
Priority date	—
Expiry date	Jul 11, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/036
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm−3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.