Integrated assemblies and methods of forming integrated assemblies

US11889691B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Shuangqiang Luo · Boise, US
• Dong Wang · Singapore, SG
• Rui Zhang · Chandler, US
• DA-WEI XING · Kunshan, CN
• Xiao Li · Yardley, US
• Pei Qiong Cheung · Singapore, SG
• Xiao Zeng · New Taipei, TW

Key dates

• Filing date: Mar 24, 2021
• Grant date: Jan 30, 2024
• Expiry date: Oct 2, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.