Patent · US Active

Device comprising wrap-gate transistors and method of manufacturing such a device

US11889704B2 · kind B2 · utility

0Cited by

2References

7Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Sylvain Barraud · Grenoble, FR
Francois Andrieu · Meylan, FR

Key dates

Filing date	Dec 23, 2020
Grant date	Jan 30, 2024
Priority date	—
Expiry date	Dec 23, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8833
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A device includes gate-all-around transistors and method for manufacturing such a device. A method for manufacturing a microelectronic device includes at least two transistors each comprising a channel in the shape of a wire extending in a first direction x, a gate surrounding said channel, a source and a drain, said transistors being stacked in a third direction z and each occupying a level nz (z=1 . . . 4) of given altitude in the third direction z.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.