Photonic device and method of making same
US11892678B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Sep 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/1347
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic device includes a silicon layer, wherein the silicon layer extends from a waveguide region of the photonic device to a device region of the photonic device, and the silicon layer includes a waveguide portion in the waveguide region. The photonic device further includes a cladding layer over the waveguide portion, wherein the device region is free of the cladding layer. The photonic device further includes a low refractive index layer in direct contact with the cladding layer, wherein the low refractive index layer comprises silicon oxide, silicon carbide, silicon oxynitride, silicon carbon oxynitride, aluminum oxide or hafnium oxide. The photonic device further includes an interconnect structure over the low refractive index layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.