Grating replication using helmets and topographically-selective deposition
US11894270B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Apr 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments include an interconnect structure and methods of forming such an interconnect structure. In an embodiment, the interconnect structure comprises a first interlayer dielectric (ILD) and a first interconnect layer with a plurality of first conductive traces partially embedded in the first ILD. In an embodiment, an etch stop layer is formed over surfaces of the first ILD and sidewall surfaces of the first conductive traces. In an embodiment, the interconnect structure further comprises a second interconnect layer that includes a plurality of second conductive traces. In an embodiment, a via between the first interconnect layer and the second interconnect layer may be self-aligned with the first interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.