PNP controlled ESD protection device with high holding voltage and snapback
US11894362B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 5, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Jun 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
An ESD protection device protects a circuit from TLPs between a first terminal and a second terminal. The device includes an NPN discharge structure and a PNP triggering device. The first terminal is coupled to the p-doped emitter and the n-doped base of the PNP triggering device and also the n-doped emitter of the NPN discharge structure. The second terminal is coupled to the n-doped collector of the NPN discharge structure. The p-doped collector of the PNP triggering device is coupled to the p-doped base of the NPN discharge structure. A TLP causes base-collector junction breakdown in the PNP triggering device, which results in a current through the PNP triggering device. That current is injected into the base of the NPN discharge structure, which results in a larger discharge current through the NPN discharge structure. The device provides high holding voltage ESD protection device with snapback.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.