Method for producing a superjunction device
US11894445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Aug 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for producing a semiconductor device, the method including forming a plurality of semiconductor arrangements one above the other, wherein forming each of the plurality of semiconductor arrangements includes forming a semiconductor layer, forming a plurality of trenches in a first surface of the semiconductor layer, and implanting dopant atoms of at least one of a first type and a second type into at least one of a first sidewall and a second sidewall of each of the plurality of trenches. Forming of at least one of the plurality of semiconductor arrangements further includes forming a protective layer covering mesa regions between the plurality of trenches of the respective semiconductor layer, and covering a bottom, the first sidewall and the second sidewall of each of the plurality of trenches that are formed in the respective semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.