Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

US11894449B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Berend T. Jonker · Waldorf, US
• Connie H. Li · Alexandria, US
• Kathleen M. McCreary · Washington, US
• Olaf M. J. van't Erve · Falls Church, US

Key dates

• Filing date: Sep 28, 2022
• Grant date: Feb 6, 2024
• Expiry date: Oct 28, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/822
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.