Method for forming semiconductor structure by using sacrificial layer configured to be replaced subsequently to form bit line, semiconductor structure, and memory
US11895852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Mar 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6728
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure includes: providing a substrate, a sacrificial layer and active layer on sacrificial layer being formed on the substrate; etching the active layer and sacrificial layer up to a surface of the substrate to form a plurality of active lines arranged in parallel and extending along first direction; filling an opening located between two adjacent ones of active lines to form a first isolating layer; etching an end of active lines to form an opening hole; removing sacrificial layer along opening hole, to form a gap between a bottom of the active lines and substrate; filling a conductive material in the gap to form a bit line extending along first direction; patterning the active lines to form a plurality of separate active pillars arrayed along first direction and second direction; and forming semiconductor pillars on top surfaces of respective ones of the active pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.