Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US11895920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Jul 7, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.