Substrate processing method and substrate processing device
US11897009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2019 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Mar 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and excellently solidifying the liquid film is provided. A substrate processing method includes an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and to which a liquid has adhered and making a dry atmosphere around the front surface of the substrate, a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate, and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid. The atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.