Semiconductor device and method of manufacturing semiconductor device
US11897761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jun 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15151
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.