Selective deposition of silicon oxide on dielectric surfaces relative to metal surfaces
US11898240B2 · kind B2 · utility
1Cited by
103References
20Claims
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Key dates
| Filing date | Mar 29, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Aug 25, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D1/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.