RRAM filament spatial localization using a laser stimulation
US11901002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jul 28, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
System and method to localize a position of an RRAM filament of resistive memory device at very low bias voltages using a scanning laser beam. The approach is non-invasive and allows measurement of a large number of devices for creating statistics relating to the filament formation. A laser microscope system is configured to perform a biasing the RRAM cell with voltage (or current). Concurrent to the applied bias, a laser beam is generated and aimed at different positions of the RRAM cell (e.g., by a raster scanning). Changes in the current (or voltage) flowing through the cell are measured. The method creates a map of the current (or voltage) changes at the different laser positions and detects a spot in the map corresponding to higher (or lower) current (or voltage). The method determines the (x,y) position of the spot compared to the edge/center of the RRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.