Semiconductor device and method for fabricating the same

US11901239B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chih-Kai Hsu · Tainan, TW
• Ssu-I Fu
• Chun-Ya Chiu · Tainan, TW
• Chi-Ting Wu · Tainan, TW
• Chin-Hung Chen · Tainan, TW
• Yu-Hsiang Lin · Yuanchang, TW

Key dates

• Filing date: Feb 1, 2023
• Grant date: Feb 13, 2024
• Expiry date: Feb 1, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.