Semiconductor device structure and method for forming the same
US11901266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Oct 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.