Semiconductor device structure with resistive element
US11901289B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jun 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a resistive element over the substrate. The semiconductor device structure also includes a thermal conductive element over the substrate. A direct projection of the thermal conductive element on a main surface of the resistive element extends across a portion of a first imaginary line and a portion of a second imaginary line of the main surface. The first imaginary line is perpendicular to the second imaginary line, and the first imaginary line and the second imaginary line intersect at a center of the main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.