Thin film bulk acoustic resonator and manufacturing process therefor
US11901872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2020 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jun 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film bulk acoustic resonator and a method for manufacturing the same. The thin film bulk acoustic resonator comprises a bottom electrode layer, a piezoelectric layer, and a top electrode layer, which are disposed on a substrate in which an acoustic reflection structure is located, where a portion which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure is depolarized to form a depolarized portion. The method comprises providing a bottom electrode layer on a substrate to cover an acoustic reflection structure which is formed or to be formed on the substrate; providing a piezoelectric layer on the bottom electrode layer; depolarizing a portion, which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure, to form a depolarized portion; and providing a top electrode layer on the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.