Method of manufacturing semiconductor structure having contact structure
US11903179B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 19, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jul 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a semiconductor substrate including an active region and an isolation structure. The method also includes forming a contact structure on the active region of the semiconductor substrate. The method further includes forming a dielectric spacer on opposite sides of the contact structure. The method also includes forming a conductive element on the isolation structure of the semiconductor substrate, wherein the dielectric spacer has a concave surface facing the conductive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.