Vertical semiconductor device and method for fabricating the same
US11903209B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jun 24, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jun 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by etching the alternating stack, forming a non-conformal blocking layer on the alternating stack in which the opening is formed, adsorbing a deposition inhibitor on a surface of the blocking layer to convert the non-conformal blocking layer into a conformal blocking layer on which the deposition inhibitor is adsorbed, and forming a charge storage layer on the conformal blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.