Patent · US Active

Production method for a micromechanical component

US11905166B2 · kind B2 · utility

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3Claims
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Key dates

Filing dateSep 3, 2021
Grant dateFeb 20, 2024
Priority date
Expiry dateApr 27, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH04R3/00
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A production method for a micromechanical component for a sensor or microphone device. The method includes: patterning a plurality of first trenches through a substrate surface of a monocrystalline substrate made of at least one semiconductor material using anisotropic etching, covering the lateral walls of the plurality of first trenches with a passivation layer, while bottom areas of the plurality of first trenches are kept free or are freed of the passivation layer, etching at least one first cavity, into which the plurality of first trenches opens, into the monocrystalline substrate using an isotropic etching method, in which an etching medium of the isotropic etching method is conducted through the plurality of first trenches, and by covering the plurality of first trenches by epitaxially growing a monocrystalline sealing layer on the substrate surface of the monocrystalline substrate made of the at least one identical semiconductor material as the monocrystalline substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.