Integrated photonic transceiver

US11906777B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• John Heck · Berkeley, US
• Lina He · San Jose, US
• Sungbong Park · Suneung-ri, KR
• Olufemi I. Dosunmu · Santa Clara, US
• Harel Frish · Kiryat Gat, IL
• Kelly Christopher Magruder · Albuquerque, US
• Seth M. Slavin · Albuquerque, US
• Wei Qian · Torrance, US
• Ansheng Liu · Cupertino, US
• Nutan Gautam · Sunnyvale, US
• Mark Isenberger · Corrales, US

Key dates

• Filing date: Feb 21, 2020
• Grant date: Feb 20, 2024
• Expiry date: Jun 21, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/12178
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.