System and method for controlling directionality of fast-wet etching of crystalline silicon, c-Si
US11906946B2 · kind B2 · utility
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Key dates
| Filing date | Oct 7, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Dec 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the (100) and the (110) crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.