Thermally controlled magnetic fields optimization system for sputter deposition processes
US11908669B2 · kind B2 · utility
0Cited by
4References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2022 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.