Substrate processing method and substrate processing apparatus
US11908680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Dec 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.