Multi-layered semiconductive device and methodology with polymer and transition metal dichalcogenide material
US11908690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2020 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Aug 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In certain examples, methods and semiconductor structures are directed to multilayered structures including TMD (transition metal dichalcogenide material or TMD-like material and a polymer-based layer which is characterized as exhibiting flexibility. A first layer including a TMD-based material (e.g., an atomic-thick layer including TMD) or TMD-like material is provided or grown on a surface which in certain instances may be a rigid platform or substrate. A plurality of electrodes are provided on or as part of the first layer, and another layer or film including polymer is applied to cover the first layer and the electrodes. The other layer is integrated with the TMD material or TMD-like material and the first layer, and the other layer provides a flexible substrate such as when released from the exemplary rigid platform or substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.