Substrate processing liquid for etching a metal layer, substrate processing method and substrate processing apparatus
US11908938B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 4, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Nov 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing H2O2 molecules or HO2− functioning as an etchant for etching the metal, and a complex forming agent containing NH4+ and forming a complex with ions of the metal and is adjusted to a pH of 5 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.