Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
US11914281B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/58
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.